STD65N55LF3
MOSFET N-CH 55V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ III STD65N55LF3 is a high-performance N-Channel Power MOSFET. This device features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The STD65N55LF3 offers a low on-resistance (Rds On) of 8.5mOhm at 32A and 10V Vgs, and a gate charge (Qg) of 20nC at 5V. Designed for surface mounting in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, it operates within a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in power supply, automotive, and industrial sectors requiring efficient power switching.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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