STD65N3LLH5
MOSFET N CH 30V 65A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ V series MOSFET, part number STD65N3LLH5, is an N-Channel device designed for high-efficiency power switching applications. This MOSFET features a 30V drain-source breakdown voltage and a continuous drain current capability of 65A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The low on-resistance, specified at 6.9mOhm maximum for 32.5A and 10V Vgs, is achieved through advanced STripFET™ V technology.
The STD65N3LLH5 is offered in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. Its gate threshold voltage is 3V (max) at 250µA, with a drive voltage range from 4.5V to 10V. Gate charge (Qg) is 8nC at 4.5V, and input capacitance (Ciss) is 1290pF at 25V. This component operates across a wide temperature range of -55°C to 175°C (TJ). Industries benefiting from this component include automotive, industrial power supplies, and consumer electronics. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±22V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 25 V |
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