STD60NH03LT4
MOSFET N-CH 30V 60A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ III N-Channel Power MOSFET, part number STD60NH03LT4, is a 30V device in a TO-252-3, DPAK package. This surface mount component offers a continuous drain current of 60A (Tc) with a maximum power dissipation of 70W (Tc). Key electrical specifications include a low on-resistance of 9mOhm at 30A, 10V, and a gate charge of 21nC at 5V. The input capacitance (Ciss) is 2200pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for applications requiring high current handling and efficient switching, commonly found in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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