STD60N55F3
MOSFET N-CH 55V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ III series MOSFET, part number STD60N55F3, is an N-Channel power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C, with a maximum power dissipation of 110W. The low on-resistance of 8.5mOhm at 32A and 10V gate drive voltage, coupled with a typical gate charge of 45nC, ensures excellent conduction and switching performance.
Constructed with STripFET™ III technology, the STD60N55F3 offers robust thermal management and reliability. Its TO-252-3, DPAK (SC-63) surface mount package is suitable for automated assembly processes. This component is widely utilized in power supplies, automotive electronics, and industrial motor control systems. The operating temperature range is -55°C to 175°C. This device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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