STD60N3LH5
MOSFET N-CH 30V 48A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ V series N-channel power MOSFET, part number STD60N3LH5. This device features a 30V drain-source breakdown voltage and a continuous drain current of 48A at 25°C (Tc). The low on-resistance of 8mOhm at 24A, 10V ensures high efficiency in power conversion applications. Designed for surface mounting, it comes in a TO-252-3 DPAK package. Key parameters include a gate charge of 8.8 nC at 5V and input capacitance of 1350 pF at 25V. This component is suitable for use in automotive, industrial power supply, and battery management systems. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 5V to 10V.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |
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