STD5NM50T4
MOSFET N-CH 500V 7.5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD5NM50T4 is an N-Channel Power MOSFET from the MDmesh™ series. This device features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 7.5A at 25°C (Tc). It offers a maximum power dissipation of 100W (Tc) and a low on-resistance (Rds On) of 800mOhm at 2.5A and 10V gate drive. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. Key characteristics include a gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 415 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 415 pF @ 25 V |
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