STD5NK60ZT4
MOSFET N-CH 600V 5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STD5NK60ZT4, is designed for efficient power switching applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C. The low on-resistance of 1.6Ohm maximum at 2.5A and 10V gate drive voltage, coupled with a maximum power dissipation of 90W (Tc), makes it suitable for demanding power supply designs and motor control circuits. Key parameters include a gate charge (Qg) of 34nC (max) at 10V and input capacitance (Ciss) of 690pF (max) at 25V. The TO-252-3, DPAK (SC-63) package facilitates surface mounting. This component is widely utilized in industrial power systems and consumer electronics.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
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