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STD5NK52ZD-1

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STD5NK52ZD-1

MOSFET N-CH 520V 4.4A I-PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics' SuperMESH™ series STD5NK52ZD-1 is a N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 520V and a continuous drain current (Id) of 4.4A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 70W (Tc) and an Rds On of 1.5 Ohm at 2.2A and 10V, it offers efficient switching. The device is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Key parameters include a Gate Charge (Qg) of 16.9 nC @ 10V and Input Capacitance (Ciss) of 529 pF @ 25V. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control applications.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)520 V
Gate Charge (Qg) (Max) @ Vgs16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds529 pF @ 25 V

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