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STD5NK52ZD

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STD5NK52ZD

MOSFET N-CH 520V 4.4A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STD5NK52ZD is an N-Channel SuperMESH™ Power MOSFET designed for high-voltage applications. This device features a 520 V breakdown voltage (Vdss) and a continuous drain current capability of 4.4 A at 25°C. The Rds(on) is specified at a maximum of 1.5 Ohm when driven at 10V Vgs and conducting 2.2A. With a 70W power dissipation (Tc) and a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, it is suitable for surface mount applications. Key characteristics include a gate charge (Qg) of 16.9 nC at 10V and input capacitance (Ciss) of 529 pF at 25V. This component is utilized in power supply units, lighting, and motor control applications. The operating temperature range is -55°C to 150°C.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)520 V
Gate Charge (Qg) (Max) @ Vgs16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds529 pF @ 25 V

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