STD5N20T4
MOSFET N-CH 200V 5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STD5N20T4 is an N-Channel Power MOSFET from the MESH OVERLAY™ series. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5A at 25°C (Tc). The device offers a maximum power dissipation of 45W (Tc) and a typical Rds(on) of 800mOhm at 2.5A, 10V. Key parameters include a gate charge (Qg) of 27 nC @ 10V and an input capacitance (Ciss) of 350 pF @ 25V. It operates at a maximum junction temperature of 150°C and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. This device is commonly utilized in power switching applications within the industrial and automotive sectors.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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