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STD55N4F5

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STD55N4F5

MOSFET N-CH 40V 55A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STripFET™ V series STD55N4F5 is a 40V N-Channel Power MOSFET in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. This device offers a continuous drain current of 55A (Tc) and a maximum power dissipation of 60W (Tc). Key electrical characteristics include a low on-resistance of 8.5mOhm maximum at 27.5A and 10V gate drive, with an input capacitance (Ciss) of 1600pF maximum at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V. This component is suitable for applications in automotive, industrial power control, and power supply units. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 27.5A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

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