STD50NH02LT4
MOSFET N-CH 24V 50A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' STD50NH02LT4 is an N-channel STripFET™ III power MOSFET designed for high-efficiency switching applications. This device features a 24V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc). The low on-resistance, specified at a maximum of 10.5mOhm at 25A and 10V Vgs, minimizes conduction losses. With a maximum power dissipation of 60W (Tc), it is suitable for demanding power management tasks. The MOSFET offers a gate charge of 24nC (max) at 10V Vgs and an input capacitance of 1400pF (max) at 25V Vds. It is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. Operating temperature ranges from -55°C to 175°C (TJ). This component finds application in automotive power systems, industrial power supplies, and consumer electronics.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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