STD50NH02L-1
MOSFET N-CH 24V 50A I-PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STD50NH02L-1 is an N-Channel Power MOSFET from the STripFET™ III series. This device offers a 24V Drain-Source Voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc). The MOSFET features a low on-resistance of 10.5mOhm maximum at 25A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 24nC maximum at 10V Vgs and input capacitance (Ciss) of 1400pF maximum at 25V Vds. It supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 1.8V maximum at 250µA. With a maximum power dissipation of 60W (Tc), this component is housed in a TO-251 (IPAK) package with short leads, suitable for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This component finds application in various power management and switching circuits across automotive and industrial sectors.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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