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STD50NH02L-1

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STD50NH02L-1

MOSFET N-CH 24V 50A I-PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STD50NH02L-1 is an N-Channel Power MOSFET from the STripFET™ III series. This device offers a 24V Drain-Source Voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc). The MOSFET features a low on-resistance of 10.5mOhm maximum at 25A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 24nC maximum at 10V Vgs and input capacitance (Ciss) of 1400pF maximum at 25V Vds. It supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 1.8V maximum at 250µA. With a maximum power dissipation of 60W (Tc), this component is housed in a TO-251 (IPAK) package with short leads, suitable for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This component finds application in various power management and switching circuits across automotive and industrial sectors.

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id1.8V @ 250µA
Supplier Device PackageTO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)24 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V

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