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STD50N03L-1

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STD50N03L-1

MOSFET N-CH 30V 40A IPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STD50N03L-1 is a 30V N-Channel STripFET™ III Power MOSFET designed for high-efficiency power switching applications. This device features a low on-resistance of 10.5mOhm maximum at 20A and 10V, contributing to reduced conduction losses. With a continuous drain current capability of 40A (Tc) and a maximum power dissipation of 60W (Tc), it is suitable for demanding power management tasks. The device utilizes a through-hole mounting type in an IPAK package (TO-251-3 Short Leads, TO-251AA) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 14nC (Max) at 5V and input capacitance (Ciss) of 1434pF (Max) at 25V. This MOSFET is commonly employed in automotive, industrial, and consumer electronics power supplies and motor control systems.

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1434 pF @ 25 V

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