STD4NS25T4
MOSFET N-CH 250V 4A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics N-Channel Power MOSFET, part number STD4NS25T4, from the MESH OVERLAY™ series. This device features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 4A at 25°C (Tc). The MOSFET offers a maximum On-Resistance (Rds On) of 1.1 Ohm at 2A and 10V gate drive, with a Gate Charge (Qg) of 27 nC maximum at 10V. It has an input capacitance (Ciss) of 355 pF maximum at 25V. With a power dissipation capability of 50W (Tc), this N-Channel MOSFET is designed for surface mounting in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied on tape and reel. It operates at junction temperatures up to 150°C and is suitable for applications in industrial and automotive sectors. The maximum Gate-Source Voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is 4V maximum at 250µA.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 355 pF @ 25 V |
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