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STD4NK60ZT4

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STD4NK60ZT4

MOSFET N-CH 600V 4A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics SuperMESH™ STD4NK60ZT4 is a 600V N-Channel Power MOSFET in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for surface mount applications. This device offers a continuous drain current of 4A (Tc) and a maximum power dissipation of 70W (Tc). Key electrical specifications include a Vgs(th) of 4.5V (Max) @ 50µA, Rds On (Max) of 2Ohm @ 2A, 10V, and a gate charge (Qg) of 26 nC @ 10 V. Input capacitance (Ciss) is rated at 510 pF @ 25 V. The operating temperature range extends to 150°C (TJ). This component is commonly utilized in industrial power supplies, lighting, and consumer electronics. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 2A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 25 V

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