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STD4NK60Z-1

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STD4NK60Z-1

MOSFET N-CH 600V 4A IPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STD4NK60Z-1, offers a 600V drain-source voltage and 4A continuous drain current at 25°C. Featuring a low on-resistance of 2 Ohm maximum at 2A/10V, this device is designed for high-efficiency switching applications. The IPAK package, specifically TO-251-3 Short Leads, facilitates through-hole mounting. With a maximum power dissipation of 70W (Tc) and a gate charge of 26 nC at 10V, the STD4NK60Z-1 exhibits a typical input capacitance of 510 pF. This MOSFET is suitable for use in power supply units, motor control, and lighting applications. The operating temperature range is -55°C to 150°C.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 2A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 25 V

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