STD4NK50ZT4
MOSFET N-CH 500V 3A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STD4NK50ZT4, offers a 500V drain-source voltage and 3A continuous drain current. This device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for applications requiring efficient power switching. Featuring a maximum on-resistance of 2.7 Ohms at 1.5A and 10V Vgs, and a maximum power dissipation of 45W (Tc), it is engineered for robust performance. Key parameters include a gate charge of 12 nC at 10V and input capacitance of 310 pF at 25V. This MOSFET is designed for demanding applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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