STD4NK50ZD-1
MOSFET N-CH 500V 3A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics' STD4NK50ZD-1 is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This device features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C (Tc). With a maximum power dissipation of 45W (Tc) and a low on-resistance of 2.7 Ohm at 1.5A and 10V Vgs, it offers efficient switching performance. The IPAK package (TO-251-3 Short Leads) facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 12 nC (max) at 10V Vgs and input capacitance (Ciss) of 310 pF (max) at 25V Vds. This component finds application in power supplies, lighting, and industrial automation. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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