STD4NK50ZD
MOSFET N-CH 500V 3A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics presents the STD4NK50ZD, a SuperMESH™ series N-Channel Power MOSFET. This device features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain current (Id) of 3A at 25°C, with a maximum power dissipation of 45W (Tc). The Rds(on) is specified at 2.7 Ohms maximum at 1.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 12 nC maximum and Input Capacitance (Ciss) of 310 pF maximum. Designed for surface mounting, it is housed in a TO-252-3, DPAK package and supplied on Tape & Reel. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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