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STD46N6F7

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STD46N6F7

MOSFET N-CH 60V 15A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STD46N6F7, features a 60V drain-source voltage and a continuous drain current of 15A at 25°C (Tc). This MOSFET offers a low on-resistance of 14mOhm maximum at 7.5A and 10V gate-source voltage. With a gate charge of 17nC maximum and input capacitance of 1065pF maximum, it is designed for efficient switching. Fabricated using STripFET™ technology, the STD46N6F7 is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount configuration, suitable for high-power dissipation up to 60W (Tc). Operating temperature range is -55°C to 175°C. This component is widely utilized in automotive and industrial applications requiring robust power management.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1065 pF @ 30 V

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