STD45N10F7
MOSFET N-CH 100V 45A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STD45N10F7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 45A at 25°C (Tc). The device features a low on-resistance of 18mOhm maximum at 22.5A and 10V Vgs. Fabricated using STMicroelectronics' advanced MOSFET technology, it delivers a maximum power dissipation of 60W (Tc). The STD45N10F7 is housed in a TO-252-3, DPAK package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a maximum gate charge (Qg) of 25 nC at 10V and an input capacitance (Ciss) of 1640 pF at 50V. This MOSFET is suitable for applications in power supplies, automotive electronics, and industrial motor control.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 50 V |
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