STD40P3LLH6
MOSFET P-CH 30V 40A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ H6 series MOSFET, part number STD40P3LLH6, is a P-Channel device designed for demanding applications. Featuring a 30V drain-source breakdown voltage and a continuous drain current rating of 40A at 25°C (Tc), this MOSFET offers a low on-resistance of 15mOhm at 20A and 10V Vgs. Its maximum power dissipation is 60W (Tc). The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied in Tape & Reel. Key parameters include a gate charge of 24 nC at 4.5V and input capacitance of 2615 pF at 25V. This component is suitable for use in automotive, industrial, and power management systems.
Additional Information
Series: STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2615 pF @ 25 V |
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