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STD40N2LH5

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STD40N2LH5

MOSFET N-CH 25V 40A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ V series N-Channel Power MOSFET, part number STD40N2LH5. This component features a Drain-to-Source voltage (Vdss) of 25 V and a continuous drain current (Id) of 40 A at 25°C. The device offers a maximum Rds(On) of 11.8 mOhm at 20 A and 10 V. With a gate charge (Qg) of 6.3 nC at 5 V and input capacitance (Ciss) of 700 pF at 20 V, it is suitable for applications requiring efficient switching. The power dissipation is rated at 35 W at 25°C. This MOSFET is housed in a TO-252-3, DPAK (2 leads + tab), SC-63 surface mount package and operates across a temperature range of -55°C to 175°C. It is commonly utilized in automotive and industrial power management systems.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs11.8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±22V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs6.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 20 V

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