STD3PK50Z
MOSFET P-CH 500V 2.8A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STD3PK50Z is a P-Channel SuperMESH™ MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 2.8A at 25°C (Tc). With a maximum power dissipation of 70W (Tc) and an Rds On of 4 Ohm maximum at 1.4A, 10V, it offers efficient power handling. The device is housed in a TO-252-3, DPAK package for surface mounting and operates within a temperature range of -55°C to 150°C. Key electrical parameters include a Gate Charge (Qg) of 20 nC maximum at 10V and an Input Capacitance (Ciss) of 620 pF maximum at 25V. This MOSFET is suitable for use in power supply, lighting, and industrial motor control sectors.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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