STD3NM60-1
MOSFET N-CH 600V 3A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STD3NM60-1 is an N-Channel Power MOSFET from the MDmesh™ series. This device features a 600 V (Vdss) breakdown voltage and a continuous drain current capability of 3 A at 25°C (Tc). The STD3NM60-1 offers a low on-resistance of 1.5 Ohm maximum at 1.5 A and 10 V (Vgs), with a gate charge (Qg) of 14 nC maximum at 10 V. Its input capacitance (Ciss) is rated at 324 pF maximum at 25 V. Designed for efficient power switching, this MOSFET dissipates up to 42 W (Tc) and operates within a temperature range of -65°C to 150°C (TJ). The component is housed in an IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) suitable for through-hole mounting. This component is commonly utilized in power supply units, lighting applications, and industrial motor control.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 25 V |
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