STD3NK60ZT4
MOSFET N-CH 600V 2.4A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STD3NK60ZT4, features a 600V Drain-Source Voltage (Vdss) and a continuous drain current of 2.4A (Tc) at 25°C. This device offers a maximum on-resistance (Rds On) of 3.6 Ohms at 1.2A and 10V gate drive. With a total gate charge (Qg) of 11.8 nC at 10V and input capacitance (Ciss) of 311 pF at 25V, it is suitable for high-frequency switching applications. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package with a maximum power dissipation of 45W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is utilized in power supplies, lighting, and industrial applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 311 pF @ 25 V |
Request a Quote
Clients Also Buy
STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
