STD3NK60Z-1
MOSFET N-CH 600V 2.4A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' STD3NK60Z-1 is an N-channel SuperMESH™ series Power MOSFET designed for demanding applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.4A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.6 Ohms at 1.2A and 10V Vgs, it offers efficient switching characteristics. The IPAK (TO-251-3 Short Leads) package allows for through-hole mounting and dissipates up to 45W (Tc). Key parameters include a gate charge (Qg) of 11.8 nC at 10V and input capacitance (Ciss) of 311 pF at 25V. This component is suitable for use in power supply units, lighting, and motor control applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 311 pF @ 25 V |
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