STD3NK50Z-1
MOSFET N-CH 500V 2.3A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STD3NK50Z-1, offers a 500V drain-source breakdown voltage and a continuous drain current capability of 2.3A at 25°C (Tc). This TO-251AA (IPAK) packaged device features a low on-resistance of 3.3 Ohm maximum at 1.15A and 10V Vgs. Key parameters include a gate charge of 15 nC maximum at 10V and input capacitance of 280 pF maximum at 25V. With a maximum power dissipation of 45W at 25°C (Tc), this through-hole component is suitable for applications in power supply units, lighting, and motor control. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage of ±30V.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 1.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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