STD38NH02LT4
MOSFET N-CH 24V 38A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STD38NH02LT4 is an N-Channel Power MOSFET from the STripFET™ III series. This device features a Drain-to-Source Voltage (Vdss) of 24V and a continuous Drain current (Id) of 38A at 25°C (Tc). With a maximum power dissipation of 40W (Tc), it offers a low on-resistance (Rds On) of 13.5mOhm at 19A and 10V. The MOSFET is designed for surface mounting in a TO-252-3, DPAK package and supports gate drive voltages from 5V to 10V. Key parameters include a gate charge (Qg) of 24 nC @ 10V and input capacitance (Ciss) of 1070 pF @ 25V. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in various industrial applications requiring efficient switching and power management.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1070 pF @ 25 V |
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