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STD37P3H6AG

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STD37P3H6AG

MOSFET P-CH 30V 49A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ H6 series P-Channel Power MOSFET, part number STD37P3H6AG. This AEC-Q101 qualified device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 49A at 25°C (Tc). With a maximum on-resistance (Rds On) of 15mOhm at 25A and 10V, and a power dissipation of 60W (Tc), it is ideal for demanding automotive applications. The device operates over a temperature range of -55°C to 175°C (TJ) and is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, available on tape and reel. Key electrical parameters include a gate charge (Qg) of 30.6 nC @ 10V and input capacitance (Ciss) of 1630 pF @ 25V.

Additional Information

Series: STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1630 pF @ 25 V
QualificationAEC-Q101

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