STD35N3LH5
MOSFET N-CH 30V 35A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STripFET™ V series N-channel MOSFET, part number STD35N3LH5, offers a 30V drain-source voltage and a continuous drain current of 35A at 25°C (Tc). This surface-mount device features a low Rds(on) of 16mOhm maximum at 15A and 10V, with a gate drive requirement of 4.5V to 10V. Key parameters include a gate charge of 6 nC maximum at 4.5V and input capacitance of 725 pF maximum at 25V. The component is housed in a TO-252-3, DPAK package and supports a maximum power dissipation of 35W (Tc) across an operating temperature range of -55°C to 175°C. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 725 pF @ 25 V |
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