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STD30PF03L-1

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STD30PF03L-1

MOSFET P-CH 30V 24A IPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STD30PF03L-1 is a P-Channel Power MOSFET from the STripFET™ II series. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 24 A at 25°C (Tc). It offers a low on-resistance (Rds On) of 28 mOhm maximum at 12 A and 10 V Vgs. The device has a maximum power dissipation of 70 W (Tc) and operates at junction temperatures up to 175°C. Its gate charge (Qg) is 28 nC maximum at 5 V Vgs, and input capacitance (Ciss) is 1670 pF maximum at 25 V Vds. The STD30PF03L-1 is housed in an IPAK (TO-251-3 Short Leads, TO-251AA) package for through-hole mounting. This component is suitable for applications in automotive and industrial power management.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 25 V

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