STD30NF03LT4
MOSFET N-CH 30V 30A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ II STD30NF03LT4 is an N-channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 30A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The device exhibits a low on-resistance (Rds On) of 25mOhm at 15A and 10V, achieved through its advanced trench MOSFET technology. Key parameters include a gate charge (Qg) of 18 nC at 5V and input capacitance (Ciss) of 830 pF at 25V. Operating across a wide temperature range of -65°C to 175°C (TJ), the STD30NF03LT4 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting. This device is suitable for use in automotive, industrial power supply, and power management systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |
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