STD30NE06LT4
MOSFET N-CH 60V 30A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD30NE06LT4, an N-Channel STripFET™ MOSFET, offers a 60V drain-source voltage and a continuous drain current of 30A at 25°C. This component features a low Rds(on) of 28mOhm maximum at 15A and 10V Vgs, along with a maximum gate charge of 41nC at 5V. The STripFET™ technology ensures efficient switching characteristics. With a maximum power dissipation of 55W at 25°C (Tc) and an operating junction temperature up to 175°C, it is suitable for demanding applications. The TO-252-3, DPAK (2 Leads + Tab), SC-63 package facilitates surface mounting. This MOSFET is commonly employed in industrial and automotive power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 25 V |
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