STD30NE06L
MOSFET N-CH 60V 30A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STD30NE06L is an N-Channel Power MOSFET from the STripFET™ series. This device offers a 60V drain-to-source voltage and a continuous drain current capability of 30A at 25°C (Tc). Featuring low on-resistance with a maximum of 28mOhm at 15A and 10V Vgs, it is optimized for efficiency. The device has a maximum power dissipation of 55W (Tc) and operates at junction temperatures up to 175°C. The gate charge is 41 nC maximum at 5V Vgs, and input capacitance (Ciss) is 2370 pF maximum at 25V Vds. This surface mount component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. Applications include power switching and motor control.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 25 V |
Request a Quote
Clients Also Buy
STD5N20LT4
MOSFET N-CH 200V 5A DPAK
STD30NF06LT4
MOSFET N-CH 60V 35A DPAK
STD140N6F7
MOSFET N-CH 60V 80A DPAK
