STD30N10F7
MOSFET N-CH 100V 32A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STD30N10F7 is a high-performance N-Channel MOSFET from the DeepGATE™, STripFET™ VII series. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 32 A at 25°C (Tc). With a low on-resistance (Rds On) of 24 mOhm at 16 A and 10 V (Vgs), it offers superior conduction efficiency. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting and supports a maximum power dissipation of 50 W (Tc). Key electrical characteristics include a gate charge (Qg) of 19 nC at 10 V and an input capacitance (Ciss) of 1270 pF at 50 V. This component is suitable for applications in power supply, automotive, and industrial automation sectors. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 50 V |
Request a Quote
Clients Also Buy
STD100N10F7
MOSFET N CH 100V 80A DPAK
STD25N10F7
MOSFET N-CH 100V 25A DPAK
STL7N10F7
MOSFET N-CH 100V POWERFLAT
