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STD30N10F7

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STD30N10F7

MOSFET N-CH 100V 32A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STD30N10F7 is a high-performance N-Channel MOSFET from the DeepGATE™, STripFET™ VII series. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 32 A at 25°C (Tc). With a low on-resistance (Rds On) of 24 mOhm at 16 A and 10 V (Vgs), it offers superior conduction efficiency. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting and supports a maximum power dissipation of 50 W (Tc). Key electrical characteristics include a gate charge (Qg) of 19 nC at 10 V and an input capacitance (Ciss) of 1270 pF at 50 V. This component is suitable for applications in power supply, automotive, and industrial automation sectors. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs24mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1270 pF @ 50 V

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