STD2NM60T4
MOSFET N-CH 600V 2A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics MDmesh™ series N-Channel MOSFET, part number STD2NM60T4, is a 600V device with a continuous drain current of 2A (Tc) at 25°C. This surface mount component, packaged in a DPAK (TO-252-3, DPAK), offers a maximum power dissipation of 46W (Tc) and a low on-resistance of 3.2Ohm at 1A, 10V. Key parameters include a Vgs(th) of 5V @ 250µA and a gate charge of 8.4 nC @ 10V. It is designed for applications requiring high voltage switching in power supplies, motor control, and lighting. The device operates at a maximum junction temperature of 150°C and is supplied on a Tape & Reel (TR).
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
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