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STD2NK70ZT4

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STD2NK70ZT4

MOSFET N-CH 700V 1.6A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STD2NK70ZT4 is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 700V and a continuous Drain Current (Id) of 1.6A at 25°C (Tc). With a maximum power dissipation of 45W (Tc), it is suitable for demanding power conversion tasks. The device boasts a low on-resistance of 7Ohm maximum at 800mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 11.4 nC maximum at 10V and input capacitance (Ciss) of 280 pF maximum at 25V. The STD2NK70ZT4 is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting and is supplied on a Tape & Reel. This MOSFET is commonly utilized in power supply units, lighting, and industrial automation systems.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Rds On (Max) @ Id, Vgs7Ohm @ 800mA, 10V
FET Feature-
Power Dissipation (Max)45W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V

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