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STD2NK70Z-1

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STD2NK70Z-1

MOSFET N-CH 700V 1.6A IPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics SuperMESH™ MOSFET, part number STD2NK70Z-1, is a 700V N-Channel power MOSFET. This device features a continuous drain current of 1.6A (Tc) and a maximum power dissipation of 45W (Tc). The Rds On is specified at a maximum of 7Ohm at 800mA, 10V. Key capacitances include Input Capacitance (Ciss) of 280pF (Max) @ 25V and Gate Charge (Qg) of 11.4 nC (Max) @ 10V. The threshold voltage (Vgs(th)) is a maximum of 4.5V @ 50µA, with a maximum gate-source voltage (Vgs) of ±30V. This component is housed in an IPAK (TO-251-3 Short Leads, TO-251AA) package suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). Applications include power supply units and lighting.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Rds On (Max) @ Id, Vgs7Ohm @ 800mA, 10V
FET Feature-
Power Dissipation (Max)45W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V

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