STD2NK60Z-1
MOSFET N-CH 600V 1.4A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STD2NK60Z-1 is a SuperMESH™ series N-Channel Power MOSFET designed for high-voltage applications. This device features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.4 A at 25°C (Tc). The ON-resistance (Rds On) is a maximum of 8 Ohm at 700 mA and 10 V gate-source voltage. With a maximum power dissipation of 45W (Tc), it is suitable for power factor correction, switch mode power supplies, and lighting applications. The IPAK package (TO-251-3 Short Leads) facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 10 nC (max) at 10 V and input capacitance (Ciss) of 170 pF (max) at 25 V. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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