STD28P3LLH6AG
MOSFET P-CH 30V 12A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ H6 series STD28P3LLH6AG is a P-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). The STD28P3LLH6AG offers a low on-resistance of 30mOhm maximum at 6A, 10V, contributing to reduced conduction losses. With a maximum power dissipation of 33W (Tc), it is suitable for demanding thermal environments. The MOSFET is qualified to AEC-Q101 standards, ensuring reliability for automotive applications, and is packaged in a TO-252-3, DPAK surface mount configuration. Key electrical characteristics include a gate charge of 29nC (max) at 10V and input capacitance of 1480pF (max) at 25V. The operating temperature range extends to 150°C (TJ).
Additional Information
Series: STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |
| Qualification | AEC-Q101 |
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