STD27N3LH5
MOSFET N-CH 30V 27A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ V series N-Channel Power MOSFET, part number STD27N3LH5. This device features a 30V drain-source voltage and a continuous drain current of 27A at 25°C (Tc), with a maximum power dissipation of 30W (Tc). The low on-resistance is specified at 19mOhm maximum at 13.5A and 10V Vgs. Designed for efficient switching, it supports gate drive voltages from 4.5V to 10V. Key capacitance parameters include a maximum input capacitance (Ciss) of 475pF at 25V and a maximum gate charge (Qg) of 4.6nC at 5V. The STD27N3LH5 is housed in a TO-252-3, DPAK package, suitable for surface mount applications. Its operating temperature range is -55°C to 175°C (TJ). This component finds application in power management systems, automotive electronics, and industrial automation.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±22V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 25 V |
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