STD25N10F7
MOSFET N-CH 100V 25A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD25N10F7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 25A at 25°C (Tc), with a maximum power dissipation of 40W (Tc). The device exhibits a low On-Resistance (Rds On) of 35mOhm at 12.5A and 10V, facilitated by a 10V drive voltage. Key parameters include a Gate Charge (Qg) of 14 nC at 10V and an input capacitance (Ciss) of 920 pF at 50V. The STD25N10F7 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for surface mounting. This MOSFET is designed for applications in power switching and motor control across various industrial sectors. It operates within an extended temperature range of -55°C to 175°C (TJ) and has a maximum Gate-to-Source Voltage (Vgs) of ±20V. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 50 V |
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