STD22NM20NT4
MOSFET N-CH 200V 22A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ II series N-Channel Power MOSFET, part number STD22NM20NT4. This component features a 200V drain-source breakdown voltage and a continuous drain current capability of 22A at 25°C (Tc). The device offers a maximum on-resistance of 105mOhm at 11A and 10V Vgs. Designed for surface mounting within a TO-252-3, DPAK package, it handles a maximum power dissipation of 100W (Tc). Key parameters include a gate charge of 50 nC (max) at 10V Vgs and an input capacitance of 800 pF (max) at 25V Vds. This MOSFET is suitable for applications requiring high efficiency and fast switching, commonly found in power supply units, lighting, and industrial motor control. It operates across a temperature range of -65°C to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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