STD20N20T4
MOSFET N-CH 200V 18A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ II N-Channel Power MOSFET STD20N20T4 offers 200V drain-source voltage and 18A continuous drain current at 25°C (Tc). This surface mount DPAK package (TO-252-3) provides a maximum power dissipation of 90W (Tc) and a low on-resistance of 125mOhm at 10A, 10V. Key parameters include a gate charge (Qg) of 39 nC @ 10V and input capacitance (Ciss) of 940 pF @ 25V. The device supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 4V @ 250µA. Ideal for high-efficiency power switching applications in industrial and automotive sectors.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 25 V |
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