STD1NK80Z-1
MOSFET N-CH 800V 1A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH™ series N-Channel Power MOSFET, STD1NK80Z-1, offers an 800V drain-source voltage rating and a continuous drain current of 1A at 25°C. This device features a maximum power dissipation of 45W (Tc) and a low on-resistance of 16 Ohms at 500mA, 10V. The gate charge (Qg) is 7.7 nC at 10V, with input capacitance (Ciss) at a maximum of 160 pF at 25V. Designed for through-hole mounting, it is housed in a TO-251 (IPAK) package with short leads. Operating temperature range is from -55°C to 150°C. This component finds application in power supply units, lighting, and industrial motor control. The maximum gate-source voltage is ±30V, and the gate threshold voltage (Vgs(th)) is 4.5V at 50µA.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 16Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
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