STD1HNC60T4
MOSFET N-CH 600V 2A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics PowerMESH™ II series N-Channel MOSFET, STD1HNC60T4, offers 600V drain-to-source voltage and 2A continuous drain current at 25°C (Tc). This surface mount device, packaged in a TO-252-3, DPAK, features a maximum on-resistance of 5Ohm at 1A, 10V. With a gate charge of 15.5 nC (max) at 10V and input capacitance of 228 pF (max) at 25V, it is suitable for applications requiring efficient power switching. The device operates at a maximum junction temperature of 150°C and can dissipate up to 50W (Tc). This component finds application in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: PowerMESH™ IIRoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 228 pF @ 25 V |
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