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STD19NF20

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STD19NF20

MOSFET N-CHANNEL 200V 15A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STD19NF20 is a N-Channel Power MOSFET from the MESH OVERLAY™ series. This surface mount device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 15A at 25°C. The STMicroelectronics STD19NF20 offers a low on-resistance (Rds On) of 160mOhm maximum at 7.5A, 10V, with a gate drive requirement of 10V. It has a maximum power dissipation of 90W at 25°C and a gate charge (Qg) of 24 nC typical at 10V. The input capacitance (Ciss) is 800 pF maximum at 25V. Packaged in a TO-252 (DPAK) surface mount configuration, this component is suitable for applications in industrial power supplies, automotive systems, and consumer electronics. The device operates within a temperature range of -55°C to 150°C.

Additional Information

Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs160mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)90W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V

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