STD19N3LLH6AG
MOSFET N-CH 30V 10A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ STD19N3LLH6AG is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 30V Drain-Source Breakdown Voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Tc). With a low on-resistance (Rds On) of 33mOhm maximum at 5A and 10V Vgs, it minimizes conduction losses. The STripFET™ technology ensures efficient switching characteristics, with a typical Gate Charge (Qg) of 3.7 nC at 4.5V Vgs.
Fabricated using advanced MOSFET technology, this component is housed in a TO-252-3, DPAK (SC-63) surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 30W (Tc). The operating temperature range is -55°C to 175°C (TJ), and it is AEC-Q101 qualified for automotive use. Key parameters include Input Capacitance (Ciss) of 321 pF at 25V Vds and a Vgs(th) of 2.5V maximum at 250µA. The drive voltage range for optimal Rds On is between 4.5V and 10V, with a maximum Vgs of ±20V. This component is commonly utilized in power management circuits within the automotive sector.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 321 pF @ 25 V |
| Qualification | AEC-Q101 |
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